Перегляд за автором "Venger, E.F."

Сортувати за: Порядок: Результатів:

  • A biosensor approach to probe the structure and function of the adsorbed proteins: fibrinogen at the gold surface 
    Snopok, B.A.; Kostyukevych, K.V.; Rengevych, O.V.; Shirshov, Yu.M.; Venger, E.F.; Kolesnikova, I.N.; Lugovskoi, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    The kinetics of adsorption and surface structure of adsorbed layers of the human fibrinogen on the gold surface, determined by Surface Plasmon Resonance (SPR) and Atomic Force Microscopy (AFM) analysis, was employed to ...
  • About manifestation of the piezojunction effect in diode temperature sensors 
    Borblik, V.L.; Shwarts, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. ...
  • Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it 
    Kolyadina, E.Yu.; Matveeva, L.A.; Neluba, P.L.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nanostructures with fullerene C₆₀ were obtained using vacuum sublimation thermal C₆₀ fullerene powder onto unheated substrates made of silicon, mica, silica and coverslip glass. The effect of the structure, composition and ...
  • Biochemical passivation of metal surfaces for sensor application: reactive annealing of polycrystalline gold films in hydrogen sulfide atmosphere 
    Snopok, B. A.; Kostyukevych, K.V.; Beketov, G.V.; Zinio, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The formation of AuxSy interfacial layer by reactive annealing of gold films in H₂S atmosphere is investigated. This seems to be a technologically favorable technique for the large-scale and low-cost fabrication of ...
  • Coherent thermal radiation of Fabry-Perot resonator structures 
    Kollyukh, O.G.; Kyslyi, V.P.; Liptuga, A.I.; Morozhenko, V.; Pipa, V.I.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The coherent thermal radiation from semiconductor plane-parallel resonator structures is investigated both theoretically and experimentally. The coherent properties of thermal radiation from these objects are manifested ...
  • Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers 
    Semenova, G.N.; Venger, E.F.; Korsunska, N.O.; Klad’ko, V.P.; Borkovska, L.V.; Semtsiv, M.P.; Sharibaev, M.B.; Kushnirenko, V.I.; Sadofyev, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. ...
  • Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors 
    Baranskii, P.I.; Babich, V.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical ...
  • Digital aroma technology for chemical sensing: temporal chemical images of complex mixtures 
    Kruglenko, I.V.; Snopok, B.A.; Shirshov, Y.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The reliability of Electronic nose applications is mainly based on the sensitivity, repeatability and discernment properties of the sensors composing the array. Due to nature of the chosen sensitive layers, the sensors are ...
  • Dispersion of natural modes in a many-layer planar system 
    Goncharenko, A.V.; Snopok, B.A.; Shirshov, Yu.M.; Venger, E.F.; Zavadskii, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We derive the recurrence dispersion equations for natural modes of a many-layer planar system. As an illustration a five-layer planar system is considered, and solutions for guided-wave polaritons of such a system are ...
  • Effect of laser radiation on catalytic properties of silicon electrodes covered with a transition metal film and providing water decomposition 
    Primachenko, V.E.; Fedorenko, L.L.; Tsyrkunov, Yu.A.; Zinio, S.A.; Kirillova, S.I.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Current creation caused by water decomposition Н₂О → ОН+Н has been investigated for the case of an Yb-Si electrode pair after the preliminary covering of Si electrodes with transition metal (Ni, Ti, Cr) films, as well ...
  • Effect of mechanical stress on operation of diode temperature sensors 
    Borblik, V.L.; Shwarts, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Effect of uniaxial elastic strain (of moderate magnitude) on operation of n+- p-type diode temperature sensor made in silicon is considered theoretically. It is assumed that operating current and stress direction coincide ...
  • Effect of oxidation of catalytically active silicon-based electrodes on water decomposition 
    Primachenko, V.E.; Serba, O.A.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this work, we continue to study the revealed phenomenon of current creation in the electrochemical system with distilled water during its decomposition without any applied external voltage. Investigated are catalytically ...
  • Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs 
    Venger, E.F.; Beliaev, A.A.; Boltovets, N.S.; Ermolovich, I.B.; Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Voitsikhovski, D.I.; Figielski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid ...
  • Effect of strong magnetic field on surface polaritons in ZnO 
    Venger, E.F.; Ievtushenko, A.I.; Melnichuk, L.Yu.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the attenuated total reflectance technique, we studied the effect of strong uniform magnetic field H on the main properties of surface polaritons in ZnO single crystals. The used orientations were C || y , k ⊥ C , ...
  • Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium 
    Gentsar, P.A.; Matveeva, L.A.; Kudryavtsev, A.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic ...
  • Electronic properties of silicon surface at different oxide film conditions 
    Kirillova, S.I.; Primachenko, V.E.; Venger, E.F.; Chernobai, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We used measurements of temperature and electric field dependencies of surface photovoltage to study electronic properties of (100) n-silicon surface after its thermal and chemical oxidation, as well as after oxide films ...
  • Electron states at the Si–SiO₂ boundary (Review) 
    Primachenko, V.E.; Kirillova, S.I.; Venger, E.F.; Chernobai, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This review is aimed at analysis of the system of discrete and continuously distributed boundary electron states (BES) on (111) and (100) silicon surfaces in the Si-SiO₂ structures prepared mainly using thermal oxidation ...
  • Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments 
    Gorbach, T.Ya.; Holiney, R.Yu.; Matiyuk, I.M.; Matveeva, L.A.; Svechnikov, S.V.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    The effect of various pretreatments on the performance of microrelief (textured) Si wafers was studied by the techniques of low-field electroreflectance spectroscopy, scanning electron microscopy, and electron diffraction. ...
  • Influence of neutron irradiation on elctrooptical and structural properties of silicon 
    Groza, A.A.; Venger, E.F.; Varnina, V.I.; Holiney, R.Yu.; Litovchenko, P.G.; Matveeva, L.A.; Litovchenko, A.P.; Sugakov, V.I.; Shmatko, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the ...
  • Influence of some physico-chemical factors on properties of electrodes that decompose water catalytically 
    Primachenko, V.E.; Serba, O.A.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have investigated the current creation accompanied by the water decomposition H₂O → OH + H caused by various catalytically active electrodes with different electrochemical potentials, both without external electric ...